1N5817S [BL Galaxy Electrical]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | 1N5817S |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
1N5817S---1N5819S
BL
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIER
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
A - 405
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarityprotection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC A--405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N5817S
1N5818S
1N5819S
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS v oltage
20
14
20
30
21
30
40
28
40
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forw ard rectified current
1.0
A
IF(AV)
IFSM
VF
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
25.0
A
superimposed on rated load @TJ=70
0.45
0.75
0.55
0.875
Maximum instantaneous forw ard voltage @ 1.0A
0.60
0.90
V
z (Note 1)
@ 3.0A
Maximum reverse current
@TA=25
@TA=100
1.0
mA
IR
at rated DC blocking voltage
10.0
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
110
CJ
pF
50
Rθ
/ W
JA
Operating junction temperature range
- 55 ---- + 125
- 55 ---- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
www.galaxycn.com
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
1.
Document Number 0266038
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
1N5817S - - - 1N5819S
FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- PEAK FORWARD SURGE CURRENT
1.0
30
25
0.75
TJ
=T MAX
J
20
25
8.3ms Single Half
Sine-Wave
0.5
Resistive or
Inductive Load
10
5
0.375"(9.5mm)Lead
Length
0.25
0
0
1
10
100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
X -CHARACTERISTICS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
20
400
℃
TJ=25
10
1N5817S
f=1.0MHz
Vsig=50mVp-p
1N5819S
100
1N5818S
1
TJ=25
Pulse width=300
1% Duty Cycle
s
10
.1
0.1
1
10
100
.1 .3
.5
.7
.9
1.1 1.3 1.5 1.7 1.9 2.1
REVERSE VOLTAGE,VOLTS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0266038
相关型号：
1N5817SF
SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere
GXELECTRONICS
1N5817T50A
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
FAIRCHILD
1N5817T50R
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
FAIRCHILD
1N5817TR-RPCU
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明